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Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment |
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| Authors: | I. Halidou Z. Benzarti T. Boufaden B. El Jani S. Juillaguet M. Ramonda |
| Affiliation: | a Unité de Recherche sur les Hétero-Epitaxies et Application, Faculté des Sciences, 5000 Monastir, Tunisie, Tunisia b Groupe d’Etudes des Semiconducteurs (GES) CC 074, Université Montpellier II, 34095, Montpellier Cedex 5, France c Laboratoire de Microscopie à Champ Proche, Université Montpellier II, 34095, Montpellier Cedex 5, France |
| Abstract: | In this paper, the influence of silane flow on metalorganic vapour phase epitaxy (MOVPE) grown GaN on sapphire substrate by an in situ SiN treatment has been investigated. A flow of 10 sccm with treatment duration of 120 s appears to be the optimal value and improves the crystal quality. The dislocation density, determined by atomic force microscopic (AFM), is as low as 5×108 cm−2. A reduction of I2 full width at half maximum (FWHM) to 4 meV and an increase of both BE/YL and BE/DAP intensity ratio are also obtained. |
| Keywords: | MOVPE SiN treatment Reflectivity AFM Photoluminescence |
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