|
|||||
|
|
An approach to the systematic distortion correction in aberration-corrected HAADF images |
|
| Authors: | A M SANCHEZ† P L GALINDO‡ S KRET§ M FALKE¶ R BEANLAND & P J GOODHEW† |
| Affiliation: | Departamento de Ciencia de los Materiales e I.M. y Q.I., and;Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Puerto Real, 11510, Spain; Department of Engineering, University of Liverpool, Liverpool L69 3GH, U.K.; Institute of Physics, Polish Academy of Science, Al. Lotnikow 32/46. PL-020668 Warzawa, Poland; UK SuperSTEM, Daresbury Laboratory, Daresbury WA4 4AD, U.K.; Bookham Technology, Caswell, Towcester, Northants. NN12 8EQ, U.K. |
| Abstract: | Systematic distortion has been analysed in high‐angle annular dark‐field (HAADF) images which may be caused by electrical interference. Strain mapping techniques have been applied to a strain‐free GaAs substrate in order to provide a broad analysis of the influence of this distortion on the determination of local strain in the heterostructure. We have developed a methodology for estimating the systematic distortion, and we correct the original images by using an algorithm that removes this systematic distortion. |
| Keywords: | Algorithm distortion HAADF nanostructures STEM |