Excess leakage-current noise in junction field-effect transistors |
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| Authors: | Hawkins R.J. Bloodworth G.G. |
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| Affiliation: | University of Southampton, Department of Electronics, Southampton, UK; |
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| Abstract: | Measurements are reported of the excess gate leakage current IG in several n channel f.e.t.s, showing that IG varies exponentially with the inverse square root of the bias voltage between drain and gate. IG shows full shot noise, together with a component of the form Ign2?IG?/f? where values of 1.4 and 1.6 have been found for ? and ?, respectively. |
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