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High-speed monolithic GaInAs pinFET |
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| Authors: | Miura S. Mikawa T. Fujii T. Wada O. |
| Affiliation: | Fujitsu Labs. Ltd., Atsugi; |
| Abstract: | A monolithic planar structure pin photodiode/field-effect transistor (pinFET) consisting of a low capacitance InP/GaInAs embedded pin photodiode and an AlInAs/GaInAs FET has been developed for long wavelength optical communications. Very high bitrate response capability of over 8 Gbit/s and good receiver performance at 2 Gbit/s have both been demonstrated |
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