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Sb2O3掺杂Ba(Ti0.91Zr0.09)O3陶瓷的结构与性能
引用本文:刘剑林,丁士华,宋天秀. Sb2O3掺杂Ba(Ti0.91Zr0.09)O3陶瓷的结构与性能[J]. 电子元件与材料, 2010, 29(4). DOI: 10.3969/j.issn.1001-2028.2010.04.004
作者姓名:刘剑林  丁士华  宋天秀
作者单位:西华大学,材料科学与工程学院,四川,成都,610039;西华大学,材料科学与工程学院,四川,成都,610039;西华大学,材料科学与工程学院,四川,成都,610039
基金项目:四川省教育厅科技基金资助项目(No.2006C025);;西华大学校人才基金资助项目(No.R0620109)
摘    要:采用固相反应法制备了Sb2O3掺杂的Ba(Ti0.91Zr0.09)O3陶瓷,研究了Sb2O3掺杂量(x(Sb2O3)为0.5%~5.0%)对陶瓷晶相结构及介电性能的影响,分析了陶瓷电滞回线变化的原因。结果表明:Sb3+进入了Ba(Ti0.91Zr0.09)O3陶瓷晶格,引起晶格畸变,且无第二相出现。随着Sb2O3掺杂量的增加,陶瓷晶粒逐渐变小变均匀,tanδ减小。Sb2O3掺杂的Ba(Ti0.91Zr0.09)O3陶瓷为弥散相变铁电体,在x(Sb2O3)为3.0%处弥散程度最小。

关 键 词:Ba(Ti0.91Zr0.09)O3陶瓷  Sb2O3掺杂  弥散相变  介电温谱

Structure and dielectric properties of Sb2O3 doped Ba(Ti0.91Zr0.09)O3 ceramics
LIU Jianlin,DING Shihua,SONG Tianxiu. Structure and dielectric properties of Sb2O3 doped Ba(Ti0.91Zr0.09)O3 ceramics[J]. Electronic Components & Materials, 2010, 29(4). DOI: 10.3969/j.issn.1001-2028.2010.04.004
Authors:LIU Jianlin  DING Shihua  SONG Tianxiu
Affiliation:College of Materials Science & Engineering;Xihua University;Chengdu 610039;China
Abstract:Sb2O3 doped Ba(Ti0.91Zr0.09)O3 ceramics were prepared by the solid state reaction method. The effects of Sb2O3 doping amount, ranging from 0.5% to 5.0% (mole fraction), on the crystal structure and dielectric properties of the Ba(Ti0.91Zr0.09)O3 ceramics were investigated. Reasons for the variation in the ferroelectric hysteresis loops were discussed. The results show that the doped Sb3+ enters into the crystal lattice of the Ba(Ti0.91Zr0.09)O3 ceramics, leading to lattice distortion, moreover, there is no ...
Keywords:Ba(Ti0.91Zr0.09)O3 ceramic   Sb2O3 doping   diffused phase transition   dielectric-temperature spectrum
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