| 一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器 |
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| 引用本文： | 朱龙德,G.A.B.Feak,J.M.Ballantyne,D.K.Wagner,P.L.Tihanyi.一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器[J].半导体学报,1989,10(10):799-804. |
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| 作者姓名： | 朱龙德 G.A.B.Feak J.M.Ballantyne D.K.Wagner P.L.Tihanyi |
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| 作者单位： | 中国科学院半导体研究所，美国康乃尔大学电机系，美国康乃尔大学电机系，美国麦道公司光电子中心，美国麦道公司光电子中心 北京 |
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| 摘 要： | 本文描述一种由MOCVD生长的GaAs/GaAlAs 分别限制单量子阱片子制作的锁相列阵大功率激光器.由十个单横模器件耦合而成的列阵器件,其阈值电流为67mA,线性输出功率大于500mW,微分量子效率达60％.列阵器件由强耦合区和弱耦合区构成,考察了强耦合区的几何结构对耦合模即输出远场分布的影响.
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| 关 键 词： | MOCVD GaAlAs 锁相列阵 激光器 |
A Kind of Phased Array Lasers Made of GsAs/GaAlAs Graded Index Separate Confinement Single Quantum Well Heterostructures |
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| Zhu Longde/Institute of Semiconductors. Academia Sinica,BeijingG. A. B. Feak/School of Eleetrical Engincering. Cornell University. USAJ. M. Ballantyne/School of Eleetrical Engincering. Cornell University. USAD. K. Wagner/Opta-elecronics Center,McDonnell Dauglas Astronautiess Co.,USAP.L. Tihanyi/Opta-elecronics Center,McDonnell Dauglas Astronautiess Co.,USA.A Kind of Phased Array Lasers Made of GsAs/GaAlAs Graded Index Separate Confinement Single Quantum Well Heterostructures[J].Chinese Journal of Semiconductors,1989,10(10):799-804. |
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| Authors: | Zhu Longde/Institute of Semiconductors Academia Sinica BeijingG A B Feak/School of Eleetrical Engincering Cornell University USAJ M Ballantyne/School of Eleetrical Engincering Cornell University USAD K Wagner/Opta-elecronics Center McDonnell Dauglas Astronautiess Co USAPL Tihanyi/Opta-elecronics Center McDonnell Dauglas Astronautiess Co USA |
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| Abstract: | Phase-locked array lasers made of MOCVD grown GaAs/GaAlA.graded-index separateconfinement heterostructure single quantum well wafer were investigated.The threshold currentof the array composed of ten ridge waveguide fundamental latteral mode lasers was 67 mA,linear output power was more than 500 mW, external differential quantum, efficiency was60%.The configuration af the arrays consisted of strongly coupling central region and weaklycoupling mirror regions, and effect of the geometrical configuration of the strongly couplingregion on the coupled supermode was examined. |
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| Keywords: | MOCVD GaAs/GaAlA graded-index separate-confinemet single quantum well structure phased array laser Array threshold Output power Differential quantum efficiency Coupling structure super mode |
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