| GaAs MMIC通孔破裂的应力分析 |
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| 引用本文： | 陈传荣,赵霞,蒋幼泉. GaAs MMIC通孔破裂的应力分析[J]. 微纳电子技术, 2004, 41(4): 42-45 |
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| 作者姓名： | 陈传荣 赵霞 蒋幼泉 |
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| 作者单位： | 南京电子器件研究所GaAs工程中心,江苏,南京,210016 |
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| 摘 要： | 就GaAsMMIC中器件通孔的应力分布、受力结构和应力来源展开讨论,得出了应力聚集于通孔边缘和圆形通孔具有最强受力能力的结论,并提出了降低应力的解决方案。
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| 关 键 词： | 砷化镓 微波单片集成电路 器件失效 通孔 应力 热膨胀匹配 |
| 文章编号： | 1671-4776(2004)04-0042-04 |
| 修稿时间： | 2004-03-02 |
Stress solution to via hole cracks in GaAs MMIC |
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| CHEN Chuan-rong,ZHAO Xia,JIANG You-quan. Stress solution to via hole cracks in GaAs MMIC[J]. Micronanoelectronic Technology, 2004, 41(4): 42-45 |
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| Authors: | CHEN Chuan-rong ZHAO Xia JIANG You-quan |
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| Abstract: | The geometric structure in force of via holes and source of stress are discussed,the conclusion is that stress on MMIC focus on the edge of via holes and that round via hole is the best geometric structure in MMIC process. At last,a solution to via hole cracks is reached. |
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| Keywords: | GaAs MMIC device failure via hole stress match of linear thermal expansion |
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