A Raman and photoconductivity analysis of boron-doped SiC : H films deposited using the electron cyclotron resonance method |
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Authors: | S F YOON R JI J AHN W I MILNE |
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Affiliation: | (1) School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Republic of Singapore;(2) Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 1PZ, UK |
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Abstract: | Hydrogenated amorphous silicon carbide films (a-SiC:H) were deposited using the electron cyclotron resonance chemical vapour
deposition technique from a mixture of methane, silane and hydrogen, with diborane as the doping gas. The effect of the microwave
power on the deposition rate were studied, and variations in the photo and dark conductivities were investigated in conjunction
with film analysis using the Raman scattering technique. The conductivity increases rapidly to a maximum, followed by rapid
reduction at high microwave powers. The ratio of the photo to dark conductivity, σph/σd, peaks at microwave powers of ∼600
W. Under conditions of high hydrogen dilution and increasing microwave power, Raman scattering analysis showed evidence of
the formation and increase of microcrystalline silicon and diamond-like components in the films, the former of which could
account for the rapid increase and the latter the subsequent decrease in the conductivity.
This revised version was published online in November 2006 with corrections to the Cover Date. |
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