Deformation of silicon at low temperatures |
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Authors: | M. J. Hill D. J. Rowcliffe |
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Affiliation: | (1) Brown Boveri Research Centre, CH-5401 Baden, Switzerland |
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Abstract: | The dislocation arrangements produced around microhardness indentations made in silicon at room temperature have been studied by transmission electron microscopy. Loops consisting of 30°- and 60°-dislocations are produced and move on the {111} planes. It is suggested that, during indentation, the theoretical shear strength is exceeded locally and that the observed dislocations arise as a result of the accommodation of the displacements due to block slip. On annealing up to 1030° C the loops do not appear to be mobile, rather new loops consisting of edge and screw components are formed which can move large distances. |
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