Growth of large crystals of (Pb,Ge)Te and (Pb,Sn)Te |
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Authors: | S G Parker J E Pinnell R E Johnson |
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Affiliation: | (1) Physical Sciences Research Laboratory, Texas Instruments Incorporated, 75222 Dallas, Texas |
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Abstract: | Large single crystals of Pb1-xGexTe (0 < × < 0.105) up to 10 g and Pb1-ySnyTe (0 < y < 0.26) up to 125 g were grown in sealed
tubes by self-transport onto oriented single crystal seeds. The crystals were free of voids and inclusions, had dislocation
densities as low as 103 cm-2, and were uniform in composition. Pertinent details of the growth technique, including thermal
conditions, stoichiometry of the source, and seed orientation, are described. Results of evaluation of the crystals by metallography,
Laue X-ray topography, and electron microprobe analysis are presented. |
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Keywords: | (Pb Ge)Te (Pb Sn)Te crystal growth vaportransport crystal growth single crystal material evaluation |
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