| Sr掺杂BaTi2O5单晶的制备与介电性能研究 |
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| 引用本文： | 徐鹏,王传彬,岳新艳.Sr掺杂BaTi2O5单晶的制备与介电性能研究[J].中国材料科技与设备,2012(6):47-48,55. |
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| 作者姓名： | 徐鹏 王传彬 岳新艳 |
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| 作者单位： | [1]武汉理工大学材料复合新技术国家重点实验室,湖北武汉430070 [2]东北大学材料各向异性与织构教育部重点实验室,辽宁沈阳110004 |
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| 基金项目： | 湖北省国际科技合作项目（2010BFA017）;中央高校基本科研业务费专项资金（2011--II-008） |
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| 摘 要： | 采用悬浮区熔技术制备了一种Sr掺杂的二钛酸钡（BaTi2O5）单晶（Ba1-xSrxTi2O5，x=O-0．03），重点研究了Sr掺杂量对其结构和介电性能的影响。结果表明：成功制备出物相单一、沿b轴方向生长的Ba1-xSkTi2O5单晶；适量Sr掺杂能有效改善Ba1-xSkTi2O5单晶的介电性能，其居里温度随Sr掺杂量的增加稍有降低，而介电常数极大值则呈现先增大后减小的趋势，在Sr掺杂量X=0．01时达到最大值42190。
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| 关 键 词： | BaTi2O5单晶 Sr掺杂 悬浮区熔技术 介电性能 |
Preparation and Dielectric BaTi2O5 Single Property of Sr--doped Crystalline |
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| Affiliation: | XU Peng1 , WANG Chuan--bin1, YUE Xin--yan2 State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Hubei, Wuhan, 430070, China; Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education, Northeastern University, Lliaoning, Shenyang, 110004, China) |
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| Abstract: | In the present study, Sr--doped BaTizOs single crystalline （Ba1- xSrx Ti2O5, x = 0-0.03）, a new type of non--lead fearrolectric material, was prepared by floating zone melting, and the effect of Sr--doping content on the structure and dielectric prop- erty was investigated. Single--phased Ba1-xSrxTi2O5 single crystalline with the nature of growing along b--direction was obtained. The Curie temperature of the Ba1-xSr= T2O5 single crystalline decreased slightly with increasing Sr-doping content, whereas the per- mittivity increased at first and then decreased, showing the maximum value of 42190 at x = 0. 01. The result indicated that appropri- ate Sr--doping could improve the dielectric property of the Ba1-xSrx Ti2O5 single crystalline |
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| Keywords: | BaTiz 05 single crystalline Sr-- doping Floating zone melting Dielectric property |
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