60-GHz pseudomorphicAl0.25Ga0.75As/In0.28Ga0.72As low-noise HEMTs期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

60-GHz pseudomorphicAl_0.25Ga_0.75As/In_0.28Ga_0.72As low-noise HEMTs

Authors:	Tan KL Dia RM Streit DC Shaw LK Han AC Sholley MD Liu PH Trinh TQ Lin T Yen HC

Affiliation:	TRW, Redondo Beach, CA;

Abstract:	V-band low-noise planar-doped pseudomorphic (PM) InGaAs high electron mobility transistors (HEMTs) were fabricated with an indium mole fraction of 28% in the InGaAs channel. A device with 0.15-μm T-gate achieved a minimum noise figure of 1.5 dB with an associated gain of 6.1 dB at 61.5 GHz

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