An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth |
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| Authors: | Weiner J.S. Lee J.S. Leven A. Baeyens Y. Houtsma V. Georgiou G. Yang Yang Frackoviak J. Tate A. Reyes R. Kopf R.F. Wei-Jer Sung Weimann N.G. Young-Kai Chen |
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| Affiliation: | Lucent Technol. Bell Labs., Murray Hill, NJ, USA; |
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| Abstract: | Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-/spl Omega/. The input-referred current noise is less than 35 pA//spl radic/Hz over the measurement range up to 40 GHz. |
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