Characterization of anodized aluminium—Copper vapour-deposited films by ion scattering spectrometry

Composition-depth profiles for anodized films, 100 Å thick, formed under galvanostatic conditions on vapour-deposited aluminium containing 1–10 at.% copper have been obtained via Ion Scattering Spectrometry (ISS). The OAl ratio found for the anodic layer corresponds to that for Al₂O₃ and the Cu concentration in the aluminium metal measured near the oxide—metal interface was similar to that for non-oxidized alloys. Additionally, no metallic impurities (> 0.1 at.%) were detectable in the oxide layer or the alloy.