A novel approach to the formation of amorphous carbon nitride film on silicon by ECR-CVD

Amorphous carbon nitride films have been synthesized on silicon by using an ECR-CVD system equipped with a DC bias and a mixture of C₂H₂, N₂ and Ar. Excess argon together with the application of DC bias can increase the ratio of nitrogen to carbon in the film up to 41% as determined by XPS. FTIR spectrum shows an absorption band between 1000 and 1700 cm⁻¹ which proves the incorporation of nitrogen atoms into the amorphous network of carbon. The plasma chemistry of the system was also analyzed by OES to investigate the active chemical species that were involved in the formation of carbon nitride. The result indicated that the addition of excess argon (four times more than nitrogen) can effectively enrich the excited-state CN radicals which subsequently promotes the concentration of nitrogen in the amorphous carbon nitride film. This observation is likely due to the lower ionization energy of argon (15.8 eV), argon's larger cross-section area for collision and its massive weight in comparison with the indispensable hydrogen gas as employed in the synthesis of other related materials.