| PtSi探测器的长波红外工作 |
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| 引用本文： | 廖先炳.PtSi探测器的长波红外工作[J].红外与激光工程,1996,25(6):39-41. |
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| 作者姓名： | 廖先炳 |
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| 作者单位： | 重庆光电技术研究所 |
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| 摘 要： | 通过使用分子束外延生长技术在ＰｔＳｉ／Ｓｉ界面上加进一足够薄的高掺杂浓度峰，可使ＰｔＳｉ肖特基红外探测器的截止波长延伸至长波红外范围。
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| 关 键 词： | 肖特基势垒器件 分子束外延 红外探测器 |
STUDY ON PtSi DETECTOR FOR EXTENDING ITS OPERATING WAVE-RANGE TO LONG WAVE-LENGTH INFRARED REGION |
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| Liao Xianbing.STUDY ON PtSi DETECTOR FOR EXTENDING ITS OPERATING WAVE-RANGE TO LONG WAVE-LENGTH INFRARED REGION[J].Infrared and Laser Engineering,1996,25(6):39-41. |
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| Authors: | Liao Xianbing |
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| Affiliation: | Chongqing Institute of Photoelectronic Technology Chongqing 630060 |
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| Abstract: | It is described in this paper that the cut-off wave length of PtSi Schottky infrared detector can be extended to long wave-length infrared region by doping process of setting a thin spike with high doping concentration. The cut-off wavelength can be set to desired value while the doping concentration of the P+ spike is varied. |
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| Keywords: | Subject Schottky barrier device Molecular beam epitaxial Modulation doping |
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