| InGaAs／InGaAsP分别限制应变量子阱激光器的研制及其特性研究 |
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| 引用本文： | 安海岩,杨树人,李玉东,胡礼中,刘式墉.InGaAs／InGaAsP分别限制应变量子阱激光器的研制及其特性研究[J].中国激光,1995,22(8):575-578. |
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| 作者姓名： | 安海岩 杨树人 李玉东 胡礼中 刘式墉 |
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| 作者单位： | 集成光电子学国家重点联合实验室吉林大学实验区，吉林大学电子工程系 |
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| 摘 要： | 报道了利用ＬＰ－ＭＯＶＰＥ技术生长高质量的ＩｎＧａＡｓ／ＩｎＧａＡｓＰ分别限制应变量子阱激光器结构材料、激光器制作和结果．宽而激光器实现了室温脉冲受激发射．激射波长为１．４９μｍ，在腔长为２０００μｍ时，最低阈值电流密度为０．３０ｋＡｃｍ－２．最大脉冲光输出峰值功率达５００ｍＷ以上．同时，从理论和实验上研究了阙值电流及阙值电流密度随激光器腔长的变化关系，并与ＬＰ－ＭＯＶＰＥ生长制作的宽面双异质结构激光器进行了比较．
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| 关 键 词： | LP－MOVPE，分别限制应变量子阱激光器．阙值电流密度 |
| 收稿时间： | 1994/10/17 |
Fabrication of InGaAs/InGaAsP Separated Confinement Strained-layer Multiple-quantum-well Lasers and the Research of Their Lasing Characteristics |
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| An Haiyan,Yang Shuren,Li Yudong,Hu Lizhong,Liu Shiyong.Fabrication of InGaAs/InGaAsP Separated Confinement Strained-layer Multiple-quantum-well Lasers and the Research of Their Lasing Characteristics[J].Chinese Journal of Lasers,1995,22(8):575-578. |
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| Authors: | An Haiyan Yang Shuren Li Yudong Hu Lizhong Liu Shiyong |
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| Abstract: | The successful fabrication of the room temperature broad-area InGaAs/InGaAsP separated confinement strained-layer multiple-quantum-well (MQW) pulsed lasers at 1.49 μm emission wavelength using LP-MOVPE is reported. The lowest threshold current density (Jth) at room temperature is 0.3 kA/cm for the cavity length of 2000 μm. The power saturation doesn’t occur yet while the pulsed output power is higher than 500 mW.Furthermore, the threshold current densities of these broad area lasers at varying cavity lengths have been investigated by comparing with those of the room temperature broad-area pulsed DH lasers grown by LP-MOVPE. |
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| Keywords: | LP-MOVPE separated confinement strained-layer MQW lasers threshold current density |
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