| SRAM单元中子单粒子翻转效应的Geant4模拟 |
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| 引用本文： | 郭晓强,郭红霞,王桂珍,林东生,陈伟,白小燕,杨善潮,刘岩.SRAM单元中子单粒子翻转效应的Geant4模拟[J].原子能科学技术,2010,44(3):362-367. |
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| 作者姓名： | 郭晓强 郭红霞 王桂珍 林东生 陈伟 白小燕 杨善潮 刘岩 |
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| 作者单位： | 西北核技术研究所，陕西 ;西安710024 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 应用Geant4工具,构造了不同特征尺寸的SRAM单元几何模型及单粒子翻转截面计算模型,分析了敏感体积和临界电荷对低能中子单粒子翻转效应的影响趋势,计算了反应堆裂变中子谱辐射环境下,不同特征尺寸SRAM的中子单粒子翻转截面,认为小尺寸SRAM器件的低能中子单粒子翻转效应更为严重。
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| 关 键 词： | 中子 单粒子翻转 Geant4 特征尺寸 临界电荷 |
Simulations of Single-Event Upset in SRAMs Induced by Neutrons With Geant4 |
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| GUO Xiao-qiang,GUO Hong-xia,WANG Gui-zhen,LIN Dong-sheng,CHEN Wei,BAI Xiao-yan,YANG Shan-chao,LIU Yan.Simulations of Single-Event Upset in SRAMs Induced by Neutrons With Geant4[J].Atomic Energy Science and Technology,2010,44(3):362-367. |
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| Authors: | GUO Xiao-qiang GUO Hong-xia WANG Gui-zhen LIN Dong-sheng CHEN Wei BAI Xiao-yan YANG Shan-chao LIU Yan |
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| Affiliation: | Northwest Institute of Nuclear Technology, Xi’an 710024, China |
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| Abstract: | The sensitivity of SRAMs to single-event upsets induced by neutrons with decreasing feature sizes was investigated using the Monte-Carlo code Geant4.Their device architecture and single-event upset cross section computation approach were pre-sented.The single-event upset cross sections were analyzed for mono-energetic neutron and neutrons of fission spectrum of a reactor and discussed on the basis of different parameters such as the sensitive volume,the critical charge and the incident neutron energy.Small-... |
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| Keywords: | Gcant4 neutron single-event upset Geant4 sensitive volume critical charge |
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