Size-dependent Fano Interaction in the Laser-etched Silicon Nanostructures |
| |
Authors: | Rajesh Kumar A K Shukla H S Mavi V D Vankar |
| |
Affiliation: | (1) Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, 110016, India |
| |
Abstract: | Photo-excitation and size-dependent Raman scattering studies on the silicon (Si) nanostructures (NSs) prepared by laser-induced
etching are presented here. Asymmetric and red-shifted Raman line-shapes are observed due to photo-excited Fano interaction
in the quantum confined nanoparticles. The Fano interaction is observed between photo-excited electronic transitions and discrete
phonons in Si NSs. Photo-excited Fano studies on different Si NSs show that the Fano interaction is high for smaller size
of Si NSs. Higher Fano interaction for smaller Si NSs is attributed to the enhanced interference between photo-excited electronic
Raman scattering and phonon Raman scattering. |
| |
Keywords: | Fano interference Silicon nanostructures Raman spectra |
本文献已被 SpringerLink 等数据库收录! |