Alpha-particle-induced collected charge model in SOI-DRAM's

We have developed a model for collected charges induced by an alpha-particle for SOI-DRAMs which assumes that the body capacitance equals the gate capacitance and that holes do not recombine with electrons. The validity of our model was supported by three-dimensional (3-D) device simulations that considered various gate lengths, gate oxide thicknesses, and flat-band voltages. The work function difference between the gate and body materials caused a significant increase in the current gain. The vertical band of the body region should therefore be flat to suppress the collected charge. A thinner gate oxide would also suppress the collected charge during a refresh interval. This finding could not be obtained from the conventional equation