烧结温度对SiO_2-TiO_2薄膜亲水性的影响

为了确定SiO2-TiO2薄膜制备过程的最佳烧结温度,将不同SiO2与TiO2掺杂比的样品分别在400℃和500℃下煅烧,进行与水的静态接触角测试。结果表明,在一定掺杂比范围内,SiO2的掺杂能明显提高TiO2表面亲水性,并且500℃煅烧的产品亲水性要好于400℃煅烧的产品。SEM和XRD表明,500℃煅烧的产品表面颗粒粒径要大于400℃煅烧的产品的表面颗粒粒径,并且已有了比较明显的锐钛矿晶型特征峰,而400℃煅烧的产品还是无定形态,这说明SiO2的掺杂抑制了TiO2晶粒的生长和晶型的转变。而锐钛矿晶型的TiO2亲水性要远好于无定形的TiO2,致使500℃煅烧的产品的亲水性要好于400℃煅烧的产品的亲水性,因此500℃才是SiO2-TiO2薄膜的最佳烧结温度。

Influence of heat temperature on SiO2-TiO2 film hydrophilicity

In order to determine the optimum heat temperature of SiO2-TiO2 film preparation course, we calcined different SiO2 doping ZiO2 samples under 400 ℃ or 500 ℃ using muffle furnace, and then the behaviour of these films were checked by contact angle testing. The results showed that within certain do- ping range, the hydrophilic behavior of samples doped SiO2 have obvious improvement, and within that range the hydrophilic behavior of samples calcined under 500 ℃ is better than that of samples calcined under 400 ℃. SEM and XRD indicated that：the particle diameter of samples calcined under 500 ℃ is bigger, and samples have anatase propertises, while samples calcined under 400 ℃ have amorphism fea- ture. SiO2 doping has inhibited growth of TiO2 crystal particle and transform of TiO2 crystal form. The hy- drophilic behavior of anatase crystal form is much better than that of amorphism, so 500 ℃ is the optimum temperature of 5i02-TiO2 film preparation course.