| 4H-SiC MESFET高频小信号特性的模拟与分析 |
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| 引用本文： | 王雷,张义门,张玉明,盛立志.4H-SiC MESFET高频小信号特性的模拟与分析[J].西安电子科技大学学报,2004,31(6):825-828. |
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| 作者姓名： | 王雷 张义门 张玉明 盛立志 |
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| 作者单位： | (西安电子科技大学 微电子技术研究所, 陕西 西安 710071) |
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| 基金项目： | 国家部委预研资助项目(413080600107) |
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| 摘 要： | 建立了4H-SiC MESFETs的模型，运用二维器件模拟软件MEDICI对4H-SiC MESFETs的高频小信号特性进行了研究．利用正弦稳态分析的方法对4H-SiC MESFETs的高频小信号特性进行了模拟，模拟结果与实验数值比较表明在特征频率fT以内得到了较为满意的结果．分析了不同的栅长、栅漏间距、不同的沟道掺杂以及温度变化对SiC MESFET特征频率fT的影响．
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| 关 键 词： | 4H-SiC 金属-半导体场效应晶体管 高频小信号 特征频率 |
| 文章编号： | 1001-2400(2004)06-0825-04 |
Simulation and analysis of high frequency small-signal characteristics for 4H-SiC MESFETs |
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| WANG Lei,ZHANG Yi-men,ZHANG Yu-ming,SHENG Li-zhi.Simulation and analysis of high frequency small-signal characteristics for 4H-SiC MESFETs[J].Journal of Xidian University,2004,31(6):825-828. |
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| Authors: | WANG Lei ZHANG Yi-men ZHANG Yu-ming SHENG Li-zhi |
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| Affiliation: | (Research Inst. of Microelectronics, Xidian Univ., Xi'an 710071, China) |
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| Abstract: | Small-signal high frequency characteristics of 4H-SiC MESFETs have been studied with the two-dimensional device simulator MEDICI based on the operation model of 4H-SiC MESFETs developed in this paper. The simulation results using the Sinusoidal Steady-State analysis approach agree well with the experimental data within the cut-off frequency. Also, the effects of the gate length, gate-to-drain spacer distances, impurity concentration and temperature on the high frequency characteristic of SiC MESFETs have been studied based on the presented model. |
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| Keywords: | 4H-SiC MESFET high frequency small-signal cut-off frequency |
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