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Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)] |
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| Authors: | N I Katsavets G M Laws I Harrison E C Larkins T M Benson T S Cheng C T Foxon |
| Affiliation: | 1. Private Joint-Stock Company “Semiconductor Devices”, 192281, St. Petersburg, Russia 2. Department of Electrical and Electronic Engineering, University of Nottingham, NG7 2RD, Notinngham, England 3. Department of Physics, University of Nottingham, NG7 2RD, Notinngham, England |
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