气体流量比对反应溅射Si3N4薄膜的影响

利用射频磁控反应溅射法，以高纯Si为靶材，高纯N2气为反应气体，在Si衬底上制备出了Si3N4薄膜，研究了气体流量比对薄膜质量的影响。结果表明，薄膜的沉积速率主要与气体的流量比有关，随着气体流量比的增加，沉积速率下降，靶面的溅射由金属模式过渡到氮化物模式；薄膜中N／Si的原子比增加；红外吸收谱的Si—N键的振动峰向标准峰逼近。

Effect of ratio of gas flowrate on Si3N4 thin films prepared by reactive magnetron sputtering

Si3N4 thin films were prepared on silicon substrate by RF reactive magnetron sputtering in Ar/N2 atmosphere with highly pure Si disc as the target. The effect of the ratio of gas flowrate on Si3N4 films was investigated. The results showed that the deposition rate relates mainly to the ratio of gas flowrate when other experimental parameters keep constant. With the increasing ratio, the deposition rate decreases and what are sputtered onto target changes from metal to nitride. At the same time, the atom ratio of silicon to nitride increases in film and the peak of Si-N is near to characteristic peak.