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Sputter deposition of dielectric films using a magnetic field for protection from high energy electrons
Authors:M.N. Khan
Affiliation:Controls Division, Dowty Electronics Ltd., 136 Mansfield Road, Acton, London W3 0RT, Gt. Britain
Abstract:Thin films of SiO2 and Al2O3 were prepared by r.f. sputtering. For protection from energetic electrons in the plasma, deposition was carried out in an area protected by a magnetic field of appropriate strength.The deposited films are free of pinholes, show sound insulation characteristics and have good adhesion to the substrate.
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