The use of Schottky barrier diodes for the detection of surface contamination and damage in the fabrication of GaAs MESFETS

The gates of GaAs MESFETS rely on the formation of a Schottky diode between the semiconductor surface and a deposited metal and so are extremely sensitive to the nature of this interface. For this reason an investigation of surface damage and contamination by the various processing stages involved in IC fabrication has been undertaken. This paper outlines the results obtained from processes involved in activation of ion implantation through annealing with a dielectric encapsulant, wet chemical etching, and metallization. Methods for removing or minimizing the effects of processing damage or contamination are also investigated.