Crystallization study of chemically vapour-deposited amorphous silicon films by in situ x-ray diffraction

The solid phase crystallization kinetics of chemically vapour-deposited amorphous silicon films were studied by in situ X-ray diffraction. We determined the crystalline volume directly from the Bragg peak intensities at various times during isothermal annealing in the temperature range 578 °C < T < 658 °C. From these experiments we deduced that the crystallization was due to nucleation predominantly at the substrate-film interface followed by crystal growth perpendicular to this interface. The crystal growth rate was thermally activated with an activation energy E_v of 3.1 eV. A strong 〈111〉 preferred orientation of the growing polycrystal was observed and the grain size remained constant at about 60 nm. Evidence of stresses at the amorphous-crystalline interface during the early stages of crystallization was observed. A comparison with previous conductivity measurements is also carried out.