Solid-state structure of the naphthalene-based n-type semiconductor,and performance improved with Mo-based source/drain electrodes |
| |
| Authors: | Chia-Chun KaoPang Lin |
| |
| Affiliation: | Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan; Process Technology Division, Display Technology Center, Industrial Technology Research Institute, Hisinchu, Taiwan; Department of Applied Materials and Electro-Optical Engineering, National Chi-Nan University, Nantou, Taiwan |
| |
| Abstract: | The synthesis, single-crystal structures, and device performance of novel naphthalene-diimide are described. The crystal structure has revealed the importance of a withdrawing group on solid-state packing. Metal molybdenum use as source/drain (S/D) electrodes can improve the performance of the bottom-contact device. The bottom-contact device based on a material of N,N′-bis (4-trifluoromethoxybenzyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide has a high mobility of 3.58 × 10−2 cm2 V−1 s−1, a threshold voltage of 1.3 V, and an on/off current ratio of 5.2 × 105. |
| |
| Keywords: | Organic thin-film transistors n-Type Naphthalene Air-stable Molybdenum |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
