| 纳米硅管的掺杂 |
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| 引用本文： | 裴立宅. 纳米硅管的掺杂[J]. 材料研究与应用, 2011, 5(1): 4-8 |
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| 作者姓名： | 裴立宅 |
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| 作者单位： | 安徽工业大学材料科学与工程学院安徽省金属材料与加工重点实验室,安徽马鞍山,243002 |
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| 基金项目： | 安徽工业大学青年自然科学研究基金资助项目 |
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| 摘 要： | 掺杂可以提高纳米硅管的高温稳定性及物理性能,从而制备出实用的纳米硅管基电子器件.系统地论述了钴、铁、锰、镍、铍、硼及磷等元素在掺杂纳米硅管方面的理论研究现状与进展.
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| 关 键 词： | 纳米硅管 掺杂 进展 |
Doping of silicon nanotubes |
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| PEI Li-zhai. Doping of silicon nanotubes[J]. MATERIALS RESEARCH AND APPLICATION, 2011, 5(1): 4-8 |
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| Authors: | PEI Li-zhai |
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| Affiliation: | PEI Li-zhai(School of Materials Science and Engineering,Key Lab of Materials Science and Processing of Anhui Province,Anhui University of Technology,Ma’anshan 243002,China) |
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| Abstract: | High temperature stability and physical properties of silicon nanotubes can be improved by doping so as to prepare practical silicon nanotube-based electron devices.The research situation and development on the theory of silicon nanotubes doped by Co,Fe,Mn,Ni,Be,B and P are introduced in detail and the development on the experimental doping of silicon nanotubes by B,Ge and Be is also demonstrated in the paper. |
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| Keywords: | silicon nanotubes doping development |
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