| 应变SiGe合金的喇曼光谱研究 |
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| 引用本文： | 顾书林 张荣. 应变SiGe合金的喇曼光谱研究[J]. 电子学报, 1995, 23(2): 106-109 |
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| 作者姓名： | 顾书林 张荣 |
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| 作者单位： | 南京大学物理系 |
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| 摘 要： | 本文利用喇曼光谱研究了使用快速热处理、超低压化学气相淀积方法生长的应变ＳｉＧｅ合金的微结构性质。俄歇电子能谱被用来测量ＳｉＧｅ合金中Ｇｅ的组分。实验中发现：高Ｇｅ组分的ＳｉＧｅ合金中Ｇｅ原子分布较低Ｇｅ组分样品无序和均匀，反应气体的氢气稀释以及完全无应变会使生长的ＳｉＧｅ合金中Ｇｅ原子的分布较为均匀。生长过程中应变的影响、原子的迁移以及氢原子的覆盖解释了以上实验。
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| 关 键 词： | 喇曼光谱 SiGe合金 锗 硅 |
Raman Spectra Study of Strained SiGe Alloys |
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| Gu Shulin,Zhang Rong,Han Ping,Wang Ronghua and zheng Youdou. Raman Spectra Study of Strained SiGe Alloys[J]. Acta Electronica Sinica, 1995, 23(2): 106-109 |
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| Authors: | Gu Shulin Zhang Rong Han Ping Wang Ronghua zheng Youdou |
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| Abstract: | Spectra has been employed to investigate the features of strained SiGe alloys deposited by Rapid Thermal Process and Very Low Pressure Chemical Vapor Deposition(RTP/VLPCVD) method.Auger Electron Spectroscopy has been used to determine Ge composition in SiGe layer.The Ge atom in high Ge composition SiGe alloy distributes more homogeneously and randomly than low Ge composition one.The hydrogen dilution of reaction gases and the full relaxed strain make Ge atom distribute homogeneously in SiGe alloy.These results have been explained by the influence of strain effect,atom migration and hydrogen coverage. |
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| Keywords: | aman spectra SiGe alloy Ge oomposition |
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