| Si衬底GaN基材料及器件的研究 |
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| 引用本文： | 滕晓云,刘彩池,郝秋艳,赵丽伟,张帷. Si衬底GaN基材料及器件的研究[J]. 半导体技术, 2006, 31(2): 98-101,107 |
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| 作者姓名： | 滕晓云 刘彩池 郝秋艳 赵丽伟 张帷 |
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| 作者单位： | 河北工业大学材料学院,天津,300130;河北工业大学材料学院,天津,300130;河北工业大学材料学院,天津,300130;河北工业大学材料学院,天津,300130;河北工业大学材料学院,天津,300130 |
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| 基金项目： | 教育部跨世纪优秀人才培养计划 , 河北省自然科学基金 |
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| 摘 要： | GaN具有禁带宽、热导率高等特点,广泛应用于光电子和微电子器件领域.Si衬底GaN基材料及器件的研制将进一步促进GaN基器件与传统器件工艺的集成,因而具有很高的研究价值.介绍了Si衬底GaN基材料生长及特性方面的研究现状和GaN基器件的进展情况.
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| 关 键 词： | GaN Si衬底 外延生长 |
| 文章编号： | 1003-353X（2006）02-0098-04 |
| 收稿时间： | 2005-09-12 |
| 修稿时间： | 2005-09-12 |
Study of GaN-Based Semiconductor Material and Device Grown on Si Substrate |
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| TENG Xiao-yun,LIU Cai-chi,HAO Qiu-yan,ZHAO Li-wei,ZHANG Wei. Study of GaN-Based Semiconductor Material and Device Grown on Si Substrate[J]. Semiconductor Technology, 2006, 31(2): 98-101,107 |
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| Authors: | TENG Xiao-yun LIU Cai-chi HAO Qiu-yan ZHAO Li-wei ZHANG Wei |
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| Affiliation: | School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China |
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| Abstract: | Gallium nitride has been widely used in optoelectronic and microelectronic devices field because of its large, direct bandgap, high thermal stability, etc. The study of GaN-based semiconductor material and device grown on Si substrate allows future integration of GaN devices with the mature Si-based devices and technology. The investigation to the growth of GaN on Si and related quality characterization and the development of GaN-based device are summarized. |
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| Keywords: | GaN Si substrate epitaxial growth |
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