Affiliation: | aLaboratoire des Semiconducteurs et Dispositifs Electroniques, Ecole Supérieure des Sciences et Techniques de Tunis, 05 Av. Taha Hussein, 1008 Montfleury.Tunis, Tunisia bCollege of Sciences, King Saoud University, P.O. Box 2455 Riyadh 11451, Saudi Arabia cPolitecnico di Torino, c.so Ducca Degli Abruzzi, 24; 10129 Torino, Italy |
Abstract: | Most of power electronic circuits use power semiconductor switching devices which ideally present infinite resistance when off, zero resistance when on, and switch instantaneously between those two states. Switches and rectifiers are key components in power electronic systems, which cover a wide range of applications, from power transmission to control electronics and power supplies. Typical power switching devices such as diodes, thyristors, and transistors are based on a monocrystalline silicon semiconductor or silicon carbide. Silicon is less expensive, more widely used, and a more versatile processing material than silicon carbide. The silicon carbide (SiC) has properties that allow devices with high power voltage rating and high operating temperatures. The technology overcomes some crystal growth obstacles, by using the hydrogen in the fabrication of 4H-SiC wafers. The presence of structural defects on 4H-SiC wafers was shown by different techniques such as optical microscopy and scanning electron microscopy. The presence of different SiC polytypes inclusions was found by Raman spectroscopy. Schottky diodes were realized on investigated wafers in order to obtain information about the correlation between those defects and electrical properties of the devices. The diodes with voltage breakdown as 600 V and ideality factor as 1.05 were obtained and characterized after packaging. |