Determination of the energy and concentration of amphoteric defects by differential processing of the temperature dependence of the concentration of free charge carriers

The use of the differential processing of the temperature dependence of the concentration of free charge carriers is analyzed for semiconductors containing amphoteric centers with positive and negative correlation energies under different conditions of compensation. It is found that, in the differential characteristic, the height and position of the peak corresponding to the acceptor state depend on the degree of compensation. This situation can be misinterpreted as a result of changes in the concentration and energy spectrum of the centers in the band gap of the semiconductor or as a result of the formation of new defects, as dictated by the conditions of compensation.