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Performances of novel Pd/Sn and Pd/Sn/Au ohmic metallizations to n-GaAs |
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| Authors: | M S Islam M Q Huda A H M Zahirul Alam Patrick J McNally |
| Affiliation: | a Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET), Dhaka 1000, Bangladesh b Microelectronics Research Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland |
| Abstract: | Performance of novel Pd/Sn and Pd/Sn/Au Ohmic metallizations to n-GaAs have been investigated. Metallizations were deposited using a resistance heating evaporator and annealings were performed utilizing a conventional graphite strip annealer (cGSA). Metallization samples were characterized using scanning tunneling microscopy (STM), secondary ion mass spectrometry (SIMS) and current–voltage (I–V) measurements. Contact resistivities, ρc, of the metallizations were measured utilizing conventional transmission line model (cTLM) method. Novel Pd/Sn and Pd/Sn/Au Ohmic contacts exhibit better thermal stability compared to non-alloyed Pd/Ge metallization. In order to investigate the effectiveness of novel Pd/Sn and Pd/Sn/Au Ohmic metallizations in device applications, gallium arsenide metal-semiconductor field-effect transistors (GaAs MESFETs) have been fabricated. MESFETs fabricated with Pd/Sn/Au Ohmic contacts show a extrinsic transconductance, gme, of more than 133 mS/mm for a gate length, LG, of 2 μm. |
| Keywords: | Metallizations Ohmic contacts GaAs Metal-semiconductor field-effect transistor Pd-based contacts Surface morphology |
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