| 多层难熔金属的刻蚀工艺技术研究 |
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| 引用本文： | 段雪,邓建国,刘英坤,王书明,苏丽娟,韩东,林率兵.多层难熔金属的刻蚀工艺技术研究[J].真空科学与技术学报,2005,25(6):463-466,470. |
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| 作者姓名： | 段雪 邓建国 刘英坤 王书明 苏丽娟 韩东 林率兵 |
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| 作者单位： | 中国电子科技集团公司第十三研究所,石家庄,050051 |
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| 摘 要： | 分析了用反应离子刻蚀(RIE)系统刻蚀多层难熔金属的可行性.研究了用下电极表层为阳极氧化铝的RIE完整刻蚀Au/Pt/TiW/Ti四层金属时氧化铝在Ar/SF6和Ar/CF4等离子体中对聚合作用的影响.通过实验发现,下电极表面的氧化铝经氩离子溅射会参与化学反应并加剧SF6等离子体中的聚合作用,形成大量聚合物.而在CF4等离子体中,下电极氧化铝的影响较小,聚合作用较弱,有利于多层难熔金属的刻蚀.提出了用Ar/CF4/CF4 O2完整刻蚀Au/Pt/TiW/Ti四层金属的三步刻蚀工艺技术.应用三步刻蚀工艺技术刻蚀具有微细图形、多层难熔金属的器件芯片,获得了良好的刻蚀效果.
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| 关 键 词： | 多层难熔金属 阳极氧化铝 聚合作用 |
| 文章编号： | 1672-7126（2005）06-0463-04 |
| 收稿时间： | 2005-05-09 |
| 修稿时间： | 2005-05-09 |
Etching Technology of Refractory Metals Multilayer |
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| Duan Xue,Deng Jianguo,Liu Yingkun,Wang Shuming,Su Lijuan,Han Dong,Lin shuaibing.Etching Technology of Refractory Metals Multilayer[J].JOurnal of Vacuum Science and Technology,2005,25(6):463-466,470. |
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| Authors: | Duan Xue Deng Jianguo Liu Yingkun Wang Shuming Su Lijuan Han Dong Lin shuaibing |
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| Affiliation: | 13^th Research Institute of CETC, shijiazhuang, 050051, China |
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| Abstract: | Refractory metals multilayer,grown on silica coated Si wafer,was etched by reactive ion etching(RIE).Influence of the anodized A1 surface layers of the lower electrode on polymerization in etching of the Au/Pt/TiW/Ti multilayer with Ar/SF_6 and Ar/CF_4 plasma,was studied,respectively.The results show that strong chemical reaction of the impinging Ar ions and the porous,anodized A1 layers produces fairly large amount of polymer in the SF_6 plasma,whereas much weaker polymerization was observed in CF_4 plasma etching of the multilayer.The 3-step reactive ion etching of Au/Pt/TiW/Ti with Ar/CF_4/CF_4+O_2 plasma was developed with good results in fabricationg devices made of refractory metals multilayer,with sub-micron feature size. |
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| Keywords: | RIE |
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