Electrochemical properties of silicon deposited on patterned wafer |
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| Affiliation: | 1. Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;2. Division of Semiconductor and Electronic Engineering, Uiduk University, 525 Yugeom, Gangdong, Gyeongju, Gyeongbuk 780-713, Korea;1. Guangxi Colleges and Universities Key Laboratory of Optoelectronic Information Processing, Guilin University of Electronic Technology, Guilin 541004, China;2. State Key Lab Incubation Base of Photoelectric Technology and Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi’an 710069, China;3. Guangxi Experiment Center of Information Science, Guilin 541004, China;1. College of Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, China;2. State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi''an Jiaotong University, Xi''an, Shaanxi 710049, China;1. Solid State Physics Laboratory (PMR-LPS), University of Namur, Rue de Bruxelles 61, Namur B-5000, Belgium;2. Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, Antwerp B-2020, Belgium;3. CRM Group AC&CS, Boulevard de Colonster 57B, Liege B-4000, Belgium;1. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;1. Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean, Nanjing University of Information Science & Technology, Nanjing, 210044, China;2. Jiangsu Collaborative Innovation Center on Atmospheric Environment and Equipment Technology (CICAEET), Nanjing University of Information Science & Technology, Nanjing, 210044, China;3. School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing, 210044, China;4. School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, 214122, China |
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| Abstract: | An amorphous silicon thin-film deposited on a patterned wafer is prepared by radio-frequency (rf) magnetron sputtering and is characterized by X-ray diffraction, galvanostatic cycle testing and field emission scanning electron microscopy. The specimen is assembled in cell of configuration: silicon working electrode/1 M LiPF6 in EC/DMC, electrolyte/lithium metal, counter electrode (EC = ethylenecarbonate; DMC = dimethyl carbonate). A patterned silicon (1 0 0) wafer prepared by photolithography and KOH etching is used as the electrode substrate. The size of the patterns, which are composed of arrays of the negative square pyramids, is 5 μm/side.The patterned specimen (silicon film on patterned substrate) is compared with a normal specimen (silicon deposited on a flat substrate). The rate of capacity fade on cycling is monitored as a function of the voltage window and current density. The patterned specimen displays better cycle behaviour at a high current density (high C-rate).During the cycle tests at 200 μA cm?2, the silicon electrodes yield an initial capacity of 327 μAh (cm2 μm)?1. After 100 cycles, the capacity is 285 μAh (cm2 μm)?1 and the capacity retention is 86%. Capacity retention is 76 and 61% at cycles 200 and 300, respectively. |
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