Current–voltage (I–V) characteristics of the molecular electronic devices using various organic molecules |
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| Affiliation: | 1. Department of Electrical Information & Control Engineering & Center for Organic Materials and Information Devices (COMID), Hongik University, 72-1 Sangsu-dong, Mapo-ku, Seoul 121-791, Republic of Korea;2. Department of Electronic Engineering & Center for Organic Materials and Information Devices (COMID), Hongik University, 72-1 Sangsu-dong, Mapo-ku, Seoul 121-791, Republic of Korea;3. Department of Chemistry, SungKyunKwan University, 300 Cheoncheon-dong, Jangan-ku, Suwon, Gyeonggi-do 440-746, Republic of Korea;4. Department of Science & Center for Organic Materials and Information Devices (COMID), Hongik University, 72-1 Sangsu-dong, Mapo-ku, Seoul 121-791, Republic of Korea;5. Department of Computer Engineering, Hongik University, 72-1 Sangsu-dong, Mapo-ku, Seoul 121-791, Republic of Korea;6. Department of Information Display & Center for Organic Materials and Information Devices (COMID), Hongik University, 72-1 Sangsu-dong, Mapo-ku, Seoul 121-791, Republic of Korea;1. Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517, Egypt;2. Department of Physics, Faculty of Science, AlJabl Al Gharbi University, Libya;1. Institute of Chemistry, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Viet Nam;2. Department of Chemistry, Research Institute for Natural Sciences, Korea University, Seoul 136-701, South Korea;1. State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, China;2. Laboratory of National Defense for Radioactive Waste and Environmental Security, Southwest University of Science and Technology, Mianyang 621010, China;3. SPrAM, UMR CEA/CNRS/UJF-Grenoble 1, INAC, Grenoble F-38054, France;4. Université Joseph Fourier Grenoble I, Département de Chimie Moléculaire, UMR CNRS-5250, Institut de Chimie Moléculaire de Grenoble, FR CNRS-2607, BP 53, 38041 Grenoble Cedex 9, France |
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| Abstract: | Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nano scale components and Si-technology. In this study, molecular electronic devices were fabricated with amino style derivatives as redox-active component. This molecule is amphiphilic to allow monolayer formation by the Langmuir–Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to the current–voltage (I–V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. The diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and Al top electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future. |
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