Yttria-stabilized zirconia thin films deposited on NiO–(Sm2O3)0.1(CeO2)0.8 substrates by chemical vapor infiltration |
| |
| Affiliation: | 1. Department of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533, Japan;2. Department of Applied Chemistry, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan;1. National Center for Compositional Characterization of Materials, Bhabha Atomic Research Centre, ECIL Post, Hyderabad 500 062, India;2. Analytical Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085, India;1. Department of Immunology, Institute for Biological Research “Siniša Stanković”, University of Belgrade, Bulevar Despota Stefana 142, 11060 Belgrade, Serbia;2. Faculty of Chemistry, University of Belgrade, Studentski trg 12-16, 11000 Belgrade, Serbia;3. Institute of Inorganic Chemistry, University of Vienna, Währinger Strasse 42, A-1090 Vienna, Austria |
| |
| Abstract: | Fabrication of YSZ films deposited on NiO–samaria-doped ceria (SDC) substrate was studied by the chemical vapor infiltration method (CVI). A NiO–SDC substrate was used as oxygen source. The main mechanism of YSZ growth was electrochemical vapor deposition (EVD), while the contribution of oxygen in the carrier gas increased with increasing NiO content of the substrate above 60.6 mol%. The YSZ film on SDC used as the anode proved effective in obtaining high cell performance. In particular, a YSZ film thickness of 1 μm yielded the highest cell performance in the temperature range from 973 to 1073 K. The CVI method was useful for preparing a dense and strong YSZ film on the complex-shaped NiO–SDC substrate. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
