Polysilicon emitter p-n-p transistors |
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Authors: | Maritan CM Tarr NG |
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Affiliation: | Dept. of Electron., Carleton Univ., Ottawa, Ont. ; |
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Abstract: | In-situ boron-doped polysilicon has been used to form the emitter in p-n-p transistors. Various polysilicon deposition conditions, interface preparation treatments prior to deposition, and post-deposition anneals were investigated. Unannealed devices lacking a deliberately grown interfacial oxide gave effective emitter Gummel numbers GE of 7-9×10-12s cm-4 combined with emitter resistances RE of approximately 8 μΩcm2. Introduction of a chemically grown interfacial oxide increased GE to 2×10 14s cm-4, but also raised RE by a factor of three. Annealing at 900°C following polysilicon deposition raised GE values for transistors lacking deliberate interfacial oxide to approximately 6×1013s cm-4, but had little effect of GE for devices with interfacial oxide. Both types of annealed devices gave RE values in the range 1-2 μΩcm2 |
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