| 多晶硅栅离子注入杂质对MOS器件亚阈特性的影响 |
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| 引用本文： | 谭悦 朱春翔. 多晶硅栅离子注入杂质对MOS器件亚阈特性的影响[J]. 固体电子学研究与进展, 1998, 18(2): 188-193 |
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| 作者姓名： | 谭悦 朱春翔 |
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| 作者单位： | [1]东南大学微电子中心 [2]浙江大学功率器件研究所 |
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| 摘 要： | 通过工艺模拟和实验，在引入多晶硅栅等效电容概念的基础上，建立了MOS器件亚阈特性的修正模型，并讨论了多晶硅杨高于往入杂质类型对器件亚阈特性的影响。采用常规1μmNMOS工艺制备的晶体管使用了两种源漏、多晶硅栅掺杂方案──P、As用于比较，每一硅片上均包含四种几何尺寸不同的NMOS管。测量所得的亚阈特性参数与模拟及修正模型推导结果相一致，进一步证明了模型与实际器件的统一。
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| 关 键 词： | 多晶硅栅 MOS器件 亚阈特性 |
The Influence of Ion-implanted Dopants in Polysilicon Gate on Subthreshold Characteristics of MOSFET |
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| Tan Yue. The Influence of Ion-implanted Dopants in Polysilicon Gate on Subthreshold Characteristics of MOSFET[J]. Research & Progress of Solid State Electronics, 1998, 18(2): 188-193 |
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| Authors: | Tan Yue |
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| Abstract: | An improved model of MOSFET subthreshold characteristics is proposed on the base of simulation, experiment and introduction of polysilicon gate capacitance. Influences of ion-implanted dopant type on subthreshold characteristicsare also studied. The comparisons are made between phosphorous and arsenicdoped poly-gate in a conventional 1 μm NMOS technology. Four different geometricparameter MOSFETs are included on wafers. The model is verified by the subthreshold characteristics measurements. |
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| Keywords: | Polysilicon Gate MOS Device Subthreshold Characteristics |
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