Photoelectrochemical cells with n-type ZnSe and n-type Sb2Se3 thin film semiconductor electrodes |
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| Affiliation: | 1. Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, China;2. Hefei National Laboratory for Physical Sciences at Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, Anhui, China;3. Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information Huazhong University of Science and Technology, Wuhan 430074, Hubei, China;1. Institute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, China;2. Institute of New Energy Technology, Jinan University, Guangzhou 510632, China;1. School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Physical-Technical Institute, Uzbekistan Academy of Sciences, Bodomzor Yoli 2“B”, Tashkent 100084, Uzbekistan;3. Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan;4. Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan;5. School of Physics and Physical Engineering, Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Qufu Normal University, Qufu 273165, China;6. National Renewable Energy Laboratory, Golden, CO 80401, USA;7. School of Materials, University of New South Wales, Sydney 2052, NSW, Australia;1. School of Opto-electronic Engineering, Changchun University of Science and Technology, Changchun, 130022, China;2. School of Science, Chongqing University of Technology, Chongqing, 400054, China;3. Chongqing Key Laboratory of Green Energy Materials Technology and Systems, Chongqing, 400054, China |
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| Abstract: | Photoelectrochemical cells with thin film semiconductor electrode made of ZnSe or Sb2Se3 and a platinized platinum electrode as counter electrode with I−/I−3 electrolyte have been investigated. The maximum efficiency has been observed with the cells for light wavelength about 600 nm. The conversion efficiencies of the cells with ZnSe electrode and Sb2Se3 electrode were 0.03% and 0.13%, respectively with light intensity of 92 mW cm−2. |
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