| 低温退火对稀磁半导体(Ga,Mn)As性质的影响 |
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| 引用本文： | 邓加军,赵建华,蒋春萍,牛智川,杨富华,吴晓光,郑厚植. 低温退火对稀磁半导体(Ga,Mn)As性质的影响[J]. 半导体学报, 2005, 26(13): 42-44 |
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| 作者姓名： | 邓加军 赵建华 蒋春萍 牛智川 杨富华 吴晓光 郑厚植 |
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| 作者单位： | 中国科学院半导体研究所 超晶格国家重点实验室，北京 100083;中国科学院半导体研究所 超晶格国家重点实验室，北京 100083;中国科学院半导体研究所 超晶格国家重点实验室，北京 100083;中国科学院半导体研究所 超晶格国家重点实验室，北京 100083;中国科学院半导体研究所 超晶格国家重点实验室，北京 100083;中国科学院半导体研究所 超晶格国家重点实验室，北京 100083;中国科学院半导体研究所 超晶格国家重点实验室，北京 100083 |
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| 摘 要： | 利用低温分子束外延技术在GaAs(001)上外延生长出厚度为500nm的稀磁半导体(Ga,Mn)As薄膜. 双晶X射线衍射证明其为闪锌矿结构，晶格参数为0.5683nm，据此推导出其Mn含量为7%. 磁测量结果揭示其铁磁转变温度为65K. 观察了低温退火处理对(Ga,Mn)As磁性质的影响，发现生长后退火处理显著提高了其铁磁转变温度，可以达到115K.
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| 关 键 词： | 稀磁半导体；铁磁性；分子束外延 |
Enhancement of Ferromagnetic Transition Temperature in (GaMn)As by Post-Growth Annealing |
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| Deng Jiajun,Zhao Jianhu,Jiang Chunping,Niu Zhichuan,Yang Fuhu,Wu Xiaoguang and Zheng Houzhi. Enhancement of Ferromagnetic Transition Temperature in (GaMn)As by Post-Growth Annealing[J]. Chinese Journal of Semiconductors, 2005, 26(13): 42-44 |
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| Authors: | Deng Jiajun Zhao Jianhu Jiang Chunping Niu Zhichuan Yang Fuhu Wu Xiaoguang Zheng Houzhi |
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| Affiliation: | State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | A diluted magnetic semiconductor (Ga,Mn)As film is grown on semi-insulating (001) GaAs by low-temperature molecular beam epitaxy.X-ray diffraction pattern shows its zincblende structure with a lattice constant of 0.5683nm,which corresponds to a nominal Mn composition of 7%.Magnetic measurements reveal that the ferromagnetic transition temperature is 65K.Effect of low-temperature annealing on magnetic properties of (Ga,Mn)As is also investigated.The ferromagnetic transition temperature is increased up to 115K after annealing. |
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| Keywords: | diluted magnetic semiconductor ferromagnetism molecular beam epitaxy |
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