Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors

Two-dimensional (2D) molybdenum disulfide (MoS₂) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS₂ nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS₂ nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and continuous, and their thickness of around 5 nm is equal to a few layers of MoS₂. In addition, we find that the MoS₂ nanodisc-based back-gated field effect transistors with nickel electrodes achieve very high performance. The transistors exhibit an on/off current ratio of up to 1.9 × 10⁵, and a maximum transconductance of up to 27 μS (5.4 μS/μm). Moreover, their mobility is as high as 368 cm²/Vs. Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate. The electrical properties of the MoS₂ nanodisc transistors are better than or comparable to those values extracted from single and multilayer MoS₂ FETs.