纳秒级电磁脉冲发生器的研制与相关寄生参数研究

为研究瞬态电磁脉冲故障注入对集成电路芯片的影响及其故障机理，基于Marx发生器原理和MOSFET开关特性，研制了一个全固态纳秒级电磁脉冲发生器.基于提出的HSPICE软件仿真等效模型，分析了发生器电路主要寄生参数对MOSFET开关特性的影响，并建立了相应的数学模型，为电磁脉冲发生器的研制提供了设计指南.实验结果表明:建立的数学模型精度为96.7%；基于二级Marx电路的电磁脉冲发生器可产生幅值可调（0~100 V）、脉宽可变（200~2 070 ns）、最快下降沿为32 ns的脉冲信号；在电磁探头下方5 mm处的测试线圈上可测得1 600 mV的感应电动势，并可利用该感应电动势来对芯片引入故障.

Development of nanosecond electromagnetic pulse generator andrelated parasitic parameters

To study the influence and mechanism of transient electromagnetic pulse (EMP) fault injection on integrated circuits, a total-solid-state nanosecond EMP generator based on the Marx circuit and MOSFET switching characteristics is developed. Based on the proposed HSPICE simulation equivalent model, the impacts of the main parasitic parameters of the generator circuit on the MOSFET switching characteristics are analyzed. A mathematical model is then established, which provides design guidance for the development of EMP generator. Experimental results show that the accuracy of the established mathematical model is 96.7%; The EMP generator based on two-stage Marx circuit has the capability of producing pulse signal with adjustable amplitude from 0 to 100 V, pulse width from 200 ns to 2 070 ns and the fastest falling edge of 32 ns, the induction electromotive force of 1 600 mV can be measured on the measurement coil at 5 mm below the electromagnetic probe, and the fault can be induced to the chip by using this induction electromotive force.