| Abstract: | In this paper, we develop an analytical model for the prediction of the peak voltage and the current in the current–voltage characteristics of nanowire resonant tunneling heterostructures. The model is applied in the case study of double‐barrier InAs/InP devices, and the results are obtained from numerical carrier transport calculations, in terms of structural parameters such as the nanowire radius as well as the width of the barriers and quantum well. Copyright © 2013 John Wiley & Sons, Ltd. |
