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2 MeV Si ion implantation damage in relaxed Si1−xGex |
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| Authors: | C. O'Raifeartaigh R. C. Barklie A. Nylandsted Larsen F. Priolo G. Franz G. Lulli M. Bianconi J. K. N. Lindner F. Cristiano P. L. F. Hemment |
| Affiliation: | a Physics Department. Trinity College, Dublin 2, Ireland b Institute of Physics and Astronomy, University of Aarhus, DK-8000, Aarhus C, Denmark c INFM, Universita di Catania, Corso Italia 57, I-95129, Catania, Italy d Dipartimento di Fisica, Universita di Catania, Corso Italia 57, I-95129, Catania, Italy e CNR-IMETEM, Stradale Primosole 50, I-95100, Catania, Italy f CNR-LAMEL, Via Gobetti 101, I-40129, Bologna, Italy g Institut für Physik, Universität Augsburg, D-86135, Augsburg, Germany h Department of Electronic and Electrical Engineering, University of Surrey, Guildford, UK |
| Abstract: | The damage produced by implanting, at room temperature, 3 μm thick relaxed Si1−xGex layers with 2 MeV Si+ ions has been measured as a function of Ge content (x = 0.04, 0.13, 0.24 or 0.36) and Si dose in the dose range 1010–1015 cm−2. The accumulation of damage with increasing dose has been studied as a function of Ge content by Rutherford Backscattering Spectrometry, Optical Reflectivity Depth Profiling and Transmission Electron Microscopy and an increased damage efficiency in Si1−xGex with increasing x is observed. The characteristics of implantation-induced defects have been investigated by Electron Paramagnetic Resonance. The results are discussed in the context of a model of the damage process in SiGe. |
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