| GaAs单片声电荷转移器件的研究与发展 |
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| 引用本文： | 李洪芹,孙晓玮,夏冠群. GaAs单片声电荷转移器件的研究与发展[J]. 固体电子学研究与进展, 2000, 20(4): 396-406 |
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| 作者姓名： | 李洪芹 孙晓玮 夏冠群 |
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| 作者单位： | 中科院上海冶金研究所,200050 |
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| 摘 要： | 声电荷转移 (Acoustic charge transport,简写 ACT)器件是 2 0世纪 80年代初出现的一种新型信号处理器件 ,它集中体现了声表面波 (SAW)和半导体技术的优点 ,能与其它信号处理器件进行单片集成 ,完成各种信号处理功能 ,在军事防御和商业方面有广泛应用。文中主要介绍 ACT器件的基本结构、工作原理以及器件工艺流程 ;最后介绍了 ACT器件的应用前景。
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| 关 键 词： | 砷化镓 声电荷转移 信号处理 |
Research and Development of GaAs Monolithic Acoustic Charge Transport Devices |
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| Li Hongqin,Sun Xiaowei,Xia Guanqun. Research and Development of GaAs Monolithic Acoustic Charge Transport Devices[J]. Research & Progress of Solid State Electronics, 2000, 20(4): 396-406 |
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| Authors: | Li Hongqin Sun Xiaowei Xia Guanqun |
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| Abstract: | Acoustic charge transport(ACT) devices,which appeared at the beginning of 1980s,is a new type of signal processing device.It reflects the merits of both SAW and semiconductor techniques,and can be monolithic integrated with other signal processing devices to realize various kinds of signal processing functions.It can be extensively applied in military defense and commerce.The authors introduce mainly the basic structure,working principle and process flow of ACT device.Finally the vast range of the applicable perspective for ACT device is elaborated. |
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| Keywords: | GaAs acoustic charge transport signal process |
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