| 红外CCD多路传输器的研制 |
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| 引用本文： | 程开富,刘心莲,李仁豪. 红外CCD多路传输器的研制[J]. 微纳电子技术, 1997, 0(5) |
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| 作者姓名： | 程开富 刘心莲 李仁豪 |
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| 作者单位： | 重庆光电技术研究所 |
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| 摘 要： | 成功地研制了八元线阵红外ＣＣＤ多路传输器。该器件为三相结构，采用埋沟和三层多晶硅技术。器件动态范围≥４５ｄＢ，转移效率≥９９．９９％，非均匀性±５％，信号输出幅度≥８００ｍＶ，每个输出信号时间为９６．６μｓ，驱动电压±１５Ｖ。
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| 关 键 词： | 红外电荷耦合器件 多路传输器 埋沟 |
Development of Infrared Charge Coupled Devices Multiplexer |
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| Cheng Kaifu,Liu Xinlian,Li Renhao. Development of Infrared Charge Coupled Devices Multiplexer[J]. Micronanoelectronic Technology, 1997, 0(5) |
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| Authors: | Cheng Kaifu Liu Xinlian Li Renhao |
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| Abstract: | Eight element linear array infrared charge coupled devices (IRCCD)multiplexer has been developed successfully.The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.The dynamic range of the device is up to ≥45dB with the transfer efficiency 99 99%.The non uniformity is ±5%,signal output amplitude is≥800mV,each output signal time is 96 6μs,and drive voltage is±15V. |
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| Keywords: | IRCCD Multiplexer Buried channel |
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