| SiC涂层的快速气相沉积 |
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| 引用本文： | 张昭林 易同斌 张隆平. SiC涂层的快速气相沉积[J]. 西安工业学院学报, 2004, 24(4): 376-377,385 |
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| 作者姓名： | 张昭林 易同斌 张隆平 |
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| 作者单位： | 兵器工业第五九研究所，兵器工业第五九研究所，兵器工业第五九研究所 重庆400039，重庆400039，重庆400039 |
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| 摘 要： | 介绍了一种采用化学气相沉积技术，利用SiCl4 CH4体系快速沉积SiC涂层的方法，并讨论了工艺条件对沉积过程的影响．结果表明，采用SiCl4 CH4体系在900℃便可实现SiC的快速沉积，此方法所得SiC涂层的纯度不高，但适用于制备构件的抗烧蚀涂层．
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| 关 键 词： | SiC 化学气相沉积 涂层 |
| 文章编号： | 1000-5714(2004)04-0376-02 |
Study on the high speed chemical vapor deposition for SiC coating |
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| ZHANG Zhao_lin,YI Tong_bin,ZHANG Long_ping. Study on the high speed chemical vapor deposition for SiC coating[J]. Journal of Xi'an Institute of Technology, 2004, 24(4): 376-377,385 |
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| Authors: | ZHANG Zhao_lin YI Tong_bin ZHANG Long_ping |
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| Abstract: | A method of high speed CVD for SiC coating has been introduced and the effects of technical condition on the deposition process has also been discussed in this paper.The results show that the high speed deposion for SiC coating can be achieved by using the system of SiC_4+CH_4.Although the purity of SiC coating obtained by the method is not very high,SiC coating is very suitable in application of burning proof coating. |
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| Keywords: | SiC chemical vapor deposition(CVD) coating |
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