| 通讯设备用低阻高耐压过流保护器材料研究 |
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| 引用本文： | 苏卫彦,陈亿裕.通讯设备用低阻高耐压过流保护器材料研究[J].电子元件与材料,2006,25(8):61-63,69. |
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| 作者姓名： | 苏卫彦 陈亿裕 |
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| 作者单位： | 华南理工大学电子材料科学与工程系,广东,广州,510640;华南理工大学电子材料科学与工程系,广东,广州,510640 |
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| 摘 要： | 过流保护器要求芯片尺寸为φ5mm×2.2mm,电阻值为15?,耐电压AC330V。采用液相施主掺杂和添加钙等方法优化配方制成PTCR材料。经复阻抗谱、SEM及XRD等测试分析表明,材料的微观结构得到了明显改善,PTC性能得以提高。当x(Mn(NO3)2)为0.47%时,材料的居里点为70℃、室温电阻率为14?·cm、温度系数为11.5%℃–1、耐压强度大于165V/mm。
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| 关 键 词： | 电子技术 通讯设备 过流保护器 液相施主掺杂 PTCR |
| 文章编号： | 1001-2028（2006）08-0061-03 |
| 收稿时间： | 2006-02-14 |
| 修稿时间： | 2006-02-14 |
Research on Materials of Low Resistivity, High Voltage Over-current Protector for Communication Apparatus |
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| SU Wei-yan,CHEN Yi-yu.Research on Materials of Low Resistivity, High Voltage Over-current Protector for Communication Apparatus[J].Electronic Components & Materials,2006,25(8):61-63,69. |
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| Authors: | SU Wei-yan CHEN Yi-yu |
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| Abstract: | The required over-current protection chip size of our task is φ 5 mm×2.2 mm, and the corresponding resistance and voltage durability are 15 ? and 330 V(AC). Using liquid-phase donor doping and calcium adding etc method to optimize the formulation, a PTCR material was acquired. Through complex impedance spectra, SEM, XRD etc. tests, it was proved that the microstructure and PTC properties of the material were improved. When x(Mn(NO3)2)=0.47%, The Curie point of the material is 70℃, room temperature resistivity is 14 ?·cm, temperature coefficient of resistance(TCR) is 11.5%℃–1, voltage durance is over 165 V/mm. |
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| Keywords: | PTCR |
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